ZXTP07012EFF Datasheet, PDF (2/7 Pages) Zetex Semiconductors – 12V, SOT23F, PNP medium power transistor

ZXTP07012EFF
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-12
-12
-7
-4
-8
-1
Unit
V
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
(Note 5)
Symbol
Power Dissipation
Linear Derating Factor
(Note 6)
PD
(Note 7)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
RθJA
RθJL
TJ, TSTG
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.8
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP07012EFF
Document number: DS33727 Rev. 3 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated