ZXTP03200BG_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 200V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTP03200BG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Static Ratio (Note 11)
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
VCE(sat)
VBE(sat)
VBE(on)
Min
-220
-220
-200
-7
-
-
-
100
100
20
-
-
-
-
-
-
-
Transitional Frequency (Note 11)
fT
-
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
-
td
tr
ts
-
tf
-
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Typ.
-245
-245
-225
-8.4
< -1
-
< -1
195
170
50
5
-37
-130
-135
-180
-955
-860
105
31
21
18
680
75
Max
-
-
-
-
-50
-0.5
-10
-
300
-
-
-50
-155
-160
-275
-1,100
-1,000
-
-
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
-
mV
mV
mV
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
IE = -100µA
VCB = -200V
VCB = -200V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -5A, VCE = -5V
IC = -0.1A, IB = -10mA
IC = -0.5A, IB = -25mA
IC = -1A, IB = -100mA
IC = -2A, IB = -400mA
IC = -2A, IB = -400mA
IC = -2A, VCE = -5V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -50V, IC = -1A,
IB1 = -IB2 = -100mA
ZXTP03200BG
Datasheet Number: DS33722 Rev. 2 - 2
4 of 7
www.diodes.com
December 2015
© Diodes Incorporated