ZXTP03200BG_16 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 200V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
ZXTP03200BG
Value
Unit
-220
V
-200
V
-7
V
-2
A
-5
A
-1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
1.25
1.65
3.0
5.8
100
76
41.6
21.5
10.5
-55 to +150
Unit
W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the collector lead on 15mm x 15mm 1oz. copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz. copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz. copper.
8. Same as Note 7, except measured at t<5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP03200BG
Datasheet Number: DS33722 Rev. 2 - 2
2 of 7
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December 2015
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