ZXTN25020DG_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V NPN HIGH GAIN TRANSISTOR

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(forward blocking)
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
BVCBO
BVCEX
BVCEO
BVECX
BVECO
BVEBO
ICBO
Min Typ
100 125
100 120
20
35
6
8.3
5
6.1
7
8.3

< 1


Collector-Emitter Cut-Off Current
ICEX


Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE

<1

40

60

100

130

225
 1,090

950
300 450
250 360
50
85

15
Current Gain-Bandwidth Product (Note 11)
fT

Input Capacitance (Note 11)
Output Capacitance (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Cibo

Cobo

td

tr

ts

tf

Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
215
152
16.5
67.7
72.2
361
63.9
Max






50
0.5
100
50
48
75
120
180
290
1,150
1,050
900





25




ZXTN25020DG
QFZT653
Unit
V
V
V
V
V
V
nA
µA
nA
nA
mV
mV
mV
mV
mV
mV
mV




MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = 100µA
IC = 100µA, RBE <1kΩ or
-1V< VBE > 0.25V
IC = 10mA
IE = 100µA, RBC <1kΩ or
0.25V< VBC > -0.25V
IE = 100µA
IE = 100µA
VCB = 100V
VCB = 100V, TA = 100°C
VCE = 100V, RBE <1kΩ or
-1V < VBE > 0.25V
VEB = 5.6V
IC = 1A, IB = 100mA
IC = 1A, IB = 20mA
IC = 2A, IB = 40mA
IC = 2A, IB = 20mA
IC = 7A, IB = 700mA
IC = 7A, IB = 700mA
IC = 7A, VCE = 2V
IC = 10mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 7A, VCE = 2V
IC = 15A, VCE = 2V
VCE = 10V, IC = 50mA,
f = 100MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
IC = 1A, VCC = 10V,
IB1 = -IB2 = 10mA
ZXTN25020DG
Document Number DS33695 Rev. 2 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated