ZXTN25020DG_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 20V NPN HIGH GAIN TRANSISTOR

ZXTN25020DG
QFZT653
Thermal Characteristics and Derating Information (@TA = +25°C, unless otherwise specified.)
V
CE(sat)
10 _Limit
DC
1
1s
100m
100ms
10ms _1ms
Single Pulse. T =25°C
amb
100µs
101m00m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1m
100µ
10µ
Failure may occur in this region
BV
= 20V
BR(CEO)
1µ
100n0
BV
= 100V
BR(CEV)
20
40
60
80 100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
40
30
D=0.5
20
D=0.2
10
1000µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
10
1010µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
3.0
See note (7)
2.5
2.0
See note (6)
1.5
1.0
0.5 ^{See note (5)}
0.00 _{20 40 60 80 100 120 140 160}
Temperature (°C)
Derating Curve
ZXTN25020DG
Document Number DS33695 Rev. 2 - 2
3 of 7
www.diodes.com
November 2015
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