ZXTN2007G Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2007G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
R≤1kΩ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
Min
Typ
80
125
80
125
30
40
7
8.1
—
<1
—
—
—
<1
—
—
—
<1
25
35
—
50
100
185
—
1.03
—
0.92
100
175
100
200
100
150
20
30
Transition Frequency
fT
—
140
Output Capacitance (Note 9)
Switching Times
COBO
tON
tOFF
—
48
—
37
—
425
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
—
50
0.5
100
0.5
10
35
50
65
125
220
1.13
1
300
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
V
V
—
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 10mA
IE = 100µA
VCB = 70V
VCB = 70V, TA = +100°C
VCB = 70V
VCB = 70V, TA = +100°C
VEB = 6V
IC = 500mA, IB = 20mA
IC = 1A, IB = 100mA
IC = 1A, IB = 20mA
IC = 2A, IB = 20mA
IC = 6.5A, IB = 300mA
IC = 6.5A, IB = 150mA
IC = 6.5A, VCE = 1V
IC = 10mA, VCE = 1V
IC = 1A, VCE = 1V
IC = 7A, VCE = 1V
IC = 20A, VCE = 1V
VCE = 10V, IC = 100mA,
f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 100mA
ZXTN2007G
Document number: DS33657 Rev. 3 - 2
4 of 7
www.diodes.com
December 2015
© Diodes Incorporated