ZXTN2007G Datasheet, PDF (3/7 Pages) Zetex Semiconductors – 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2007G
Thermal Characteristics and Derating Information
V
CE(sat)
10 ^Limit
1
DC
1s
100m
100ms
10ms
1ms
Single Pulse. T =25°C
10m
amb
See note (5)
100µs
100m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
See note (5)
2.0
1.5
1.0
See note (6)
0.5
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
40 _{See note (5)}
30
D=0.5
20
D=0.2
10
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
See note (5)
10
1
100µ 1m 10m_Pul1_s0_e0m_Widt1_{h (s)}10 100 1k
Pulse Power Dissipation
ZXTN2007G
Document number: DS33657 Rev. 3 - 2
3 of 7
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December 2015
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