ZXTC2061E6 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 12V, SOT23-6, complementary medium power transistors

ZXTC2061E6
Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
ON CHARACTERISTICS (Note 13)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
BVCBO
20
BVCEO
12
BVEBO
7
ICBO
—
IEBO
—
500
hFE
480
260
VCE(sat)
—
VBE(sat)
—
VBE(on)
—
Cobo
—
fT
—
td
—
tr
—
ts
—
tf
—
Typ Max Unit
Test Condition
40
—
V I_C = 100µA, I_E = 0
17
—
V I_C = 10mA, I_B = 0
8.4
—
V I_E = 100µA, I_C = 0
<1
50
nA VCB = 20V
0.5
µA _{VCB = 20V, TA = +100°C}
<1
50
nA V_EB = 5.6V
800 1,500
IC = 10mA, VCE = 2V
750
— I_C = 1.0A, V_CE = 2V
390
IC = 5A, VCE = 2V
32
40
IC = 1.0A, IB = 100mA
50
65
60
80
mV ^{IC = 1.0A, IB = 10mA}
IC = 2.0A, IB = 40mA
145
180
IC = 5A, IB = 100mA
920 1,000 mV I_C = 5A, I_B = 100mA
810
900
mV I_C = 5A, V_CE = 2V
26
35
pF V_CB = 10V, f = 1.0MHz
260
—
MHz V_CE = 10V, I_C = 50mA, f = 100MHz
71
—
ns
70
—
233
—
ns
ns ^{VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA}
72
—
ns
Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
ON CHARACTERISTICS (Note 13)
DC Current Gain
Symbol Min
Typ
BVCBO -12
-35
BVCEO -12
-25
BVEBO
-7
-8.4
ICBO
—
—
< -1
IEBO
—
< -1
500
800
hFE
290
450
75
100
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
—
VCE(sat)
—
—
—
VBE(sat)
—
VBE(on)
—
Cobo
—
fT
—
td
—
tr
—
ts
—
tf
—
-55
-170
-220
-150
-955
-830
17
310
41
62
179
65
Note: 13. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
Max
—
—
—
-50
-0.5
-50
1500
—
—
-70
-265
-360
-200
-1,050
-900
25
—
—
—
—
—
Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA VCB = -12V
µA _{VCB = -12V, TA = +100°C}
nA V_EB = -5.6V
IC = -10mA, VCE = -2V
— I_C = -1.0A, V_CE = -2V
IC = -3.5A, VCE = -2V
IC = -1.0A, IB = -100mA
mV ^{IC = -1.0A, IB = -10mA}
IC = -2.0A, IB = -40mA
IC = -3.5A, IB = -350mA
mV I_C = -3.5A, I_B = -350mA
mV I_C = -3.5A, V_CE = -2V
pF
MHz
ns
ns
ns
ns
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
VCC = -10V, IC = -1A,
IB1 = -IB2 = -10mA
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
4 of 8
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November 2015
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