ZXTD4591E6 Datasheet, PDF (3/8 Pages) Zetex Semiconductors – DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cobo
fT
Min Typ Max
80


60


7



 100

 100

 100
100  
100  300
80
 
30




0.25
0.5

 1.1


1.0


10
180  
Note: 10. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
ZXTD4591E6
Unit
Test Condition
V I_C = 100µA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100µA, I_C = 0
nA V_CB = 60V
nA V_EB =5.6
nA V_CE = 60V
IC = 1mA, VCE = 5V

IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
V IC = 500mA, IB = 50mA
V _{IC = 1A, IB = 100mA}
V I_C = 1A, I_B = 100mA
V I_C = 1, V_CE = 5V
pF
MHz
VCB = 10V, f = 1.0MHz
IC = 50mA, VCE = 10V
f = 100MHz
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
3 of 8
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November 2015
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