ZXTD4591E6 Datasheet, PDF (2/8 Pages) Zetex Semiconductors – DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

NPN - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
PNP - Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction To Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
80
60
7
2
1
500
Value
-80
-60
-7
-2
-1
-500
Value
1.1
8.8
1.7
13.6
113
73
74
-55 to +150
ZXTD4591E6
Unit
V
V
V
A
A
mA
Unit
V
V
V
A
A
mA
Unit
W
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state. Two active dice running at equal power with heatsink split 50% to each collector.
7. Same as Note 6, except the device is measured at t < 5 seconds.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTD4591E6
Document Number: DS33652 Rev: 2 - 2
2 of 8
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November 2015
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