AO6602 Datasheet, PDF (8/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO6602
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=-15V
I_D=-2.7A
8
6
4
2
0
0
1
2 ^{Qg (nC)} 3
4
Figure 7: Gate-Charge Characteristics
300
250
C_iss
200
150
100
C_oss
50
C_rss
0
5
0
5
10 _-VDS 1_(V5_olts) 20
25
30
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
R_DS(ON)
limited
10µs
100µs
1ms
0.1
T_J(Max)=150°C
DC
T_A=25°C
10ms
10s
0.0
0.01
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
100
T_A=25°C
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
1000
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 _{RθJA=150°C/W}
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
P_D
T_on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
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