AO6602 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO6602
30V Complementary MOSFET
General Description
The AO6602 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Features
N-Channel
V_DS= 30V
I_D= 3.5A (V_GS=10V)
R_DS(ON)
< 50mΩ (V_GS=10V)
< 70mΩ (V_GS=4.5V)
P-Channel
-30V
-2.7A (V_GS=-10V)
R_DS(ON)
< 100mΩ (VGS=-10V)
< 170mΩ (VGS=-4.5V)
Top View
D1
D2
G1 1
S2 ₂
G2 3
6 ^D1
5 S1
4 D2
G1
G2
S1
S2
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
3.5
-2.7
I_D
3
-2.1
I_DM
20
-15
T_A=25°C
Power Dissipation ^B T_A=70°C
1.15
1.15
P_D
0.73
0.73
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
78
106
Maximum Junction-to-Lead
Steady-State
R_θJL
64
Max
Units
110
°C/W
150
°C/W
80
°C/W
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