IRFR5410 Datasheet, PDF (7/10 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

IRFR/U5410
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+
Circuit Layout Considerations
· Low Stray Inductance
ƒ
· Ground Plane
· Low Leakage Inductance
Current Transformer
-
-
„
+

R_G
V_GS
· dv/dt controlled by R_G
· I_SD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
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- ^VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[^V_GS^=10V ] ***
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[ ^VDD]
[I_SD]
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
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