IRFR5410 Datasheet, PDF (1/10 Pages) Kersemi Electronic Co., Ltd. – HEXFET Power MOSFET

IRFR/U5410
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR5410)
l Straight Lead (IRFU5410)
l Advanced Process Technology
G
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_qJC
R_qJA
R_qJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
HEXFET^® Power MOSFET
D
V_DSS = -100V
R_DS(on) = 0.205W
I_D = -13A
S
D-Pak
TO-252AA
I-Pak
TO-251AA
Max.
-13
-8.2
-52
66
0.53
± 20
194
-8.4
6.3
-5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
1 / 10
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