AO4924 Datasheet, PDF (7/9 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4924
Asymmetric Dual N-Channel MOSFET
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
30
20
10
4.5V
3V
2.5V
V_GS=2V
20
16
V_DS=5V
12
125°C
8
25°C
4
0
0
1
2
3
4
5
V_DS (Volts)
Fig 1: On-Region Characteristics
0
0
0.5
1
1.5
2
2.5
3
V_GS(Volts)
Figure 2: Transfer Characteristics
30
1.8
I_D=6A
25
1.5
V_GS=4.5V
V_GS=4.5V
1.2
20
V_GS=10V
0.9
V_GS=10V
I_D=7.3A
15
0
5
10
15
20
I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
55
1.0E+00
50
45
I_D=7.3A
125°C
1.0E-01
40
35
125°C
30
1.0E-02
1.0E-03
THIS PR2O5DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. A1P.P0ELI-C04AT2I5O°CNS OR USES AS CRITICAL
20
OUT OF SUCH APPLICATIONS OR US2E5S°COF ITS PRODUCTS. AOS RESERVES THE RIGHT1.T0OE-I0M5PROVE PRODUCT DESIGN,
15
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
1.0E-06
0
2
4
6
8
10
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V_SD (Volts)
Figure 6: Body-Diode Characteristics
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