AO4924 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4924
Asymmetric Dual N-Channel MOSFET
General Description
The AO4924 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to
boost efficiency further.
Features
FET1
V_DS (V) = 30V
I_D = 9A
R_DS(ON) < 15.8mΩ
R_DS(ON) < 19.5mΩ
FET2
V_DS(V) = 30V
I_D=7.3A
(V_GS = 10V)
<24mΩ
(V_GS = 10V)
<29mΩ
(V_GS = 4.5V)
SOIC-8
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 ^D1
6 D2
5 D2
SRFET^TM
D1
D2
Soft Recovery MOSFET:
Integrated Schottky Diode
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain ^TA^=25°C
9.0
Current ^A
T_A=70°C
I_DSM
7.2
Pulsed Drain Current ^B
I_DM
40
Avalanche Current ^B
I_AR
16
Repetitive avalanche energy L=0.3mH ^B
E_AR
38
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
2.0
1.3
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Max FET2
30
±12
7.3
5.9
40
12
22
2.0
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°C
Typ
Max
Units
48
62.5
°C/W
74
90
°C/W
32
40
°C/W
Typ
Max
Units
48
62.5
°C/W
74
90
°C/W
32
40
°C/W
1/9
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