SUD50N10-18P Datasheet, PDF (6/10 Pages) Vishay Siliconix – N-Channel 100-V (D-S), 175 °C MOSFET

SUD50N10-18P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Power Derating**, Junction-to-Ambient
180
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Power Derating**, Junction-to-Case
** The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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