SUD50N10-18P Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 100-V (D-S), 175 °C MOSFET

SUD50N10-18P
N-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
100
0.0185 at V_GS = 10 V
TO-252
I_D (A)^a
50
Q_g (Typ.)
48 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
APPLICATIONS
• Primary Side Switch
D
• Isolated DC/DC Converter
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD50N10-18P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V
V_GS
± 20
T_C = 25 °C
50^a
Continuous Drain Current (T_J = 150 °C)
T_C = 100 °C
T_A = 25 °C
I_D
39
8.2^b
Pulsed Drain Current
T_A = 100 °C
5.8^b
A
I_DM
100
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
50^a
2^b
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
45
E_AS
101
mJ
T_C = 25 °C
136.4
Maximum Power Dissipation
T_C = 100 °C
T_A = 25 °C
P_D
68.2
3^b
W
T_A = 100 °C
1.5^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Symbol
R_thJA
R_thJC
Typical
40
0.85
Maximum
50
1.1
Unit
°C/W
1 / 10
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