SUD50P10-43L Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 °C MOSFET

SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
140
120
40
100
30
80
20
60
40
10
20
0
0
100
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating*
0
25
50
75
100 125 150 175
T_C - Case Temperature (°C)
Single Pulse Power, Junction-to-Ambient
10
T_A
L I_A
BV - V_DD
1
0.000001 0.00001
0.0001
0.001
0.01
T_A - Time In Avalanche (s)
Single Pulse Avalance Capability
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5/9
www.freescale.net.cn