SUD50P10-43L Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 100-V (D-S) 175 °C MOSFET

SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 100
0.043 at V_GS = - 10 V
0.048 at V_GS = - 4.5 V
I_D (A)^a
- 37
- 35
Q_g (Typ.)
54 nC
TO-252
FEATURES
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
S
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 100
V
V_GS
± 20
T_C = 25 °C
- 37.1^a
Continuous Drain Current (T_J = 175 °C)^b
T_C = 125 °C
T_A = 25 °C
I_D
- 31^a
- 9.2^{b, c}
Pulsed Drain Current
T_A = 125 °C
- 7.7^{b, c}
A
I_DM
- 40
Continuous Source Current (Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
- 50^a
- 6.9^{b, c}
Avalanche Current
Single Pulse Avalanche Energy
I_AS
- 35
L = 0.1 mH
E_AS
61
mJ
T_C = 25 °C
136
Maximum Power Dissipation
T_C = 70 °C
95
T_A = 25 °C
P_D
8.3^{b, c}
W
T_A = 70 °C
5.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
1/9
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
www.freescale.net.cn