SUD10P06-280L Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
2.5
V_GS = 10 V
I_D = 5 A
2.0
25 °C, unless otherwise noted
100
1.5
T_J = 150 °C
10
1.0
T_J = 25 °C
0.5
0.0
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
12
9
1
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
30
Limited by R_DS(on)*
10
10 µs
100 µs
6
3
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Drain Current vs. Case Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
DC, 1 s
0.1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.01
10^-4
Single Pulse
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
3
4/7
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