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SQ1420EEH Datasheet, PDF (4/12 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
300
250
200
Ciss
150
100
50
Coss
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
6
5
ID = 2.8 A
VDS = 30 V
4
3
2
1
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Gate Charge
2.5
ID = 0.2 A
2.1
1.7
1.3
VGS = 10 V
VGS = 4.5 V
0.9
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
TJ = 150 °C
0.1
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.0
0.8
0.6
0.4
TJ = 150 °C
0.2
0.0
0
TJ = 25 °C
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
4 / 12
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