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SQ1420EEH Datasheet, PDF (2/12 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 12 V
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
VGS = 10 V
VDS5 V
VGS = 10 V
ID = 1.2 A
VGS = 10 V
ID = 1.2 A, TJ = 125 °C
VGS = 10 V
ID = 1.2 A, TJ = 175 °C
VGS = 4.5 V
ID = 1 A
VDS = 15 V, ID = 1 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 4.5 V
VDS = 30 V, ID = 2.8 A
f = 1 MHz
VDD = 30 V, RL = 30 
ID  1 A, VGEN = 4.5 V, Rg = 1 
Pulsed Currenta
Forward Voltage
ISM
VSD
IF = 0.8 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
60
1.5
-
-
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
1.1
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
2.0
2.5
-
± 500 nA
-
1
mA
-
1
-
50
μA
-
150
-
-
A
0.100 0.140
-
0.245

-
0.308
0.152 0.200
2.9
-
S
172 215
36
45
pF
24
30
2.7
4
0.7
-
nC
1.4
-
1.6
2.1

12
18
21
32
ns
8
12
7
11
-
6.7
A
0.8
1.2
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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