AOT470 Datasheet, PDF (4/6 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

AOT470/AOB470L
75V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=30V
8
I_D=30A
6
4
8
6
C_iss
4
2
0
0
20
40
60
80 100 120
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1000.0
100.0
10.0
R_DS(ON)
limited
1.0
10µs
10µs
1ms
DC
10ms
0.1
T_J(Max)=175°C
T_C=25°C
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
2
C_rss
0
C_oss
0
10
20
30
40
50
60
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
800
T_J(Max)=175°C
T_C=25°C
600
17
5
400
2
10
200
0
0.0001 0.001
0.01
0.1
Pulse Width (s)
0¹
10
Figure 10: Single Pulse Power Rati¹n⁸g Junction-to-
Case (Note F)
10
D=T_on/T
In descending order
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJC=0.56°C/W
40
1
0.1
P_D
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
www.freescale.net.cn