AOT470 Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

AOT470/AOB470L
75V N-Channel MOSFET
General Description
The AOT470/AOB470L uses advanced trench technology and design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
75V
100A
< 10.5mΩ
TO220
TO-263
D²PAK
D
D
D
G
SD
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.3mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
75
±25
100
78
200
10
8
45
300
268
134
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
10
45
0.45
Max
12
60
0.56
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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