AOD425 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD425
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
V_DS=-15V
8
I_D=-20A
2000
C_iss
6
1500
4
2
0
0
5
10 15 20 25 30 35
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1000
C_oss
500
C_rss
0
0
5
10
15
20
25
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
100
R_DS(ON)
limited
10
1
10µs
100µs
DC
1ms
10ms
0.1
T_J(Max)=175°C
T_C=25°C
0.01
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
400
T_J(Max)=175°C
320
T_C=25°C
240
160
80
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJC.R_θJC
R_θJC=2.1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
T_C=100°C
T_A=25°C
0.1
P_D
-55 to 175
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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