AOD425 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD425
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD425 uses advanced trench technology to provide excellent R_DS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is
ESD protected.
Features
V_DS (V) = -30V
I_D = -50A (V_GS = -10V)
R_DS(ON) < 17mΩ (V_GS = -10V)
R_DS(ON) < 35mΩ (V_GS = -5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current ^F
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±25
-50
-36
-70
-9
-7
71
36
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
16
41
Steady-State
R_θJC
1.7
Max
20
50
2.1
Units
V
V
A
A
W
W
°C
Units
°C/W
°C/W
°C/W
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