AO3435 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3435
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V_DS=-10V
I_D=-3.5A
4
3
2
1
0
0
2
4
6
8
10
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
800
C_iss
600
400
200
0
0
C_oss
C_rss
5
10
15
20
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100.00
10.00 ^RDS(ON)
limited
10µs
100µ
1ms
1.00
10ms
0.1s
0.10
0.01
T_J(Max)=150°C
T_A=25°C
1s
DC
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1000
100
T_J(Max)=150°C
T_A=25°C
10
1
0.1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=T_on/T
In descending order
1
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=90°C/W
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
0.01
0.001
0.00001
Single Pulse
P_D
T_on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1000
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