AO3435 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3435
20V P-Channel MOSFET
General Description
The AO3435 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor
applications.
Features
V_DS = -20V
I_D = -3.5A
R_DS(ON) < 70mΩ
(V_GS = -4.5V)
(V_GS =- 4.5V)
R_DS(ON) < 90mΩ
R_DS(ON) < 110mΩ
R_DS(ON) < 130mΩ
(V_GS = -2.5V)
(V_GS = -1.8V)
(V_GS = -1.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
-3.5
-2.9
I_D
-2.7
-2.3
I_DM
-25
T_A=25°C
Power Dissipation ^A T_A=70°C
1.4
1
P_D
0.9
0.6
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^A Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn