SUD70N02-03P Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175 Degrees Celcious MOSFET

SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
200
T_C = - 55_C
160
25_C
120
125_C
80
0.006
0.005
0.004
0.003
0.002
40
0.001
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
7000
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
I_D - Drain Current (A)
Capacitance
C_iss
C_rss
C_oss
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
0.000
0
10
20
40
60
80
100
I_D - Drain Current (A)
Gate Charge
8
V_DS = 10 V
I_D = 50 A
6
4
2
0
0 10 20 30 40 50 60 70 80
Q_g - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 20 A
1.4
1.2
1.0
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
3/5
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