SUD70N02-03P Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175 Degrees Celcious MOSFET

PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0033 @ V_GS = 10 V
20
0.0053 @ V_GS = 4.5 V
TO-252
SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
I_D (A)^a
39
31
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High-Efficiency
D 100% R_g Tested
APPLICATIONS
D Synchronous Buck Converter
- Low-Side
- Secondary Synchronous Rectifier
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD70N02-03P
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_C= 25_C
T_A = 25_C
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"20
39^a
70^b
100
37
8.3^a
100
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
1/5
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
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