AON4420L Datasheet, PDF (3/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON4420L
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
30
4.5V
4V
3.5V
50
V_DS=5V
40
30
125°C
20
20
V_GS=3V
25°C
10
10
0
0
1
2
3
4
5
V_DS (Volts)
Figure 1: On-Region Characteristics
0
0
1
2
3
4
5
V_GS(Volts)
Figure 2: Transfer Characteristics
30
25
V_GS=4.5V
20
1.8
V_GS=10V
1.6
I_D=10A
V_GS=4.5V
1.4
I_D=8A
1.2
15
V_GS=10V
1.0
10
0.8
0
2
4
I_F6=-6.5A, ₈dI/dt=100₁₀A/µs
-50
0
50
100
150
200
I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1E+02
I_D=10A
1E+01
50
1E+00
125°C
1E-01
40
1E-02
THIS
PR3O0DUCT
HAS
BEEN
DESIGNED
AND
125°C
QUALIFIED FOR
THE
CONS1EU-M03ER
MARKET.
APPLICATIONS
OR
USES
AS
CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AU1TEH-0O4RIZED. AOS DOES NOT A2S5S°UCME ANY LIABILITY ARISING
OUT OF2S0UCH APPLICATIONS OR USES OF ITS PR2O5°DCUCTS. AOS RES1EER-0V5ES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-06
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
2
4
6
8
10
V_GS (Volts)
V_SD (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
3/5
www.freescale.net.cn