AON4420L Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON4420L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low
R_DS(ON) per unit area. This device is ideal for load switch and high speed switching applications.
Features
V_DS (V) = 30V
I_D = 10A
R_DS(ON) < 19mΩ
R_DS(ON) < 25mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
Top View
DFN 3x2
Bottom View
Pin 1
D
D
D
G
D
D
D
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
50
10
8
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
34
66
Steady-State
R_θJL
20
Max
40
80
25
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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