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SUD50N03-06P Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET
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SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = " 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 125 _C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 _C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 4.5 V, ID = 50 A
VDD = 15 V, RL = 0.3 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25 _C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
IF = 100 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
c. Independent of operating temperature.
Min Typa Max Unit
30
V
1.0
3.0
" 100
nA
1
mA
50
50
A
0.0053 0.0065
0.0105
W
0.0078 0.0095
20
S
3100
565
pF
255
1
1.9
3.1
W
21
30
10
nC
7.5
12
20
12
20
30
45
ns
10
15
100
A
1.2
1.5
V
35
70
ns
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
200
100
VGS = 10 thru 6 V
160
5V
80
Transfer Characteristics
120
60
80
40
0
0
2/5
4V
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
40
20
0
0
TC = 125 _C
25 _C
–55 _C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
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