SUD50N03-06P Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0065 at V_GS = 10 V
30
0.0095 at V_GS = 4.5 V
TO-252
FEATURES
D TrenchFETr Power MOSFET
I_D (A)^b
D 175 _C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier
84^b
Operation
*
D 100 % R_g Tested
59b
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
GDS
Top View
Drain Connected to Tab
Ordering Information:
SUD50N03-06P
SUD50N03-06P–E3 (Lead (Pb)–free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 _C
T_C = 100 _C
L = 0.1 mH
T_C = 25 _C
T_A = 25 _C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
"20
84^b
59^b
100
25
45
101.25
88
8.3^a
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t v 10 sec
Steady State
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply
R_thJA
R_thJC
1/5
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
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