SUD42N03-3M9P Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SUD42N03-3m9P
N-Channel 30 V (D-S) MOSFET
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 125 °C
V_DS = 30 V, V_GS = 0 V, T_J = 150 °C
V_DS 10 V, V_GS = 10 V
V_GS = 10 V, I_D = 22 A
V_GS = 4.5 V, I_D = 20 A
V_DS = 15 V, I_D = 20 A
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 15 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
C_rss
Q_g
Q_gs
V_DS = 15 V, V_GS = 10 V, I_D = 20 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time^c
t_d(on)
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = 15 V, R_L = 1.5 
I_D  10 A, V_GEN = 10 V, R_g = 1 
Fall Time^c
t_f
Drain-Source Body Diode Ratings and Characteristics^b T_C = 25 °C
Continuous Current
I_S
Pulsed Current
Forward Voltage^a
I_SM
V_SD
I_F = 10 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Current
I_RM(REC)
I_F = 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Q_rr
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
Typ.
Max.
Unit
30
V
1
2.5
± 250
nA
1
50
µA
250
50
A
0.0032 0.0039

0.0037 0.0045
110
S
3535
680
pF
400
67
100
10.5
nC
12.2
0.3
1.4
2.8

11
20
10
20
ns
35
53
10
20
42
A
120
0.83
1.5
V
41
62
ns
2
3
A
40
60
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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