SUD42N03-3M9P Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SUD42N03-3m9P
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) ()
0.0039 at V_GS = 10 V
0.0045 at V_GS = 4.5 V
I_D (A)
107^d
103^d
Q_g (Typ.)
67
TO-252
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
- Synchronous Buck Low Side
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V_DS
30
V
V_GS
± 20
T_C = 25 °C (Silicon Limited)
107^d
T_C = 70 °C (Silicon Limited)
I_D
85^d
T_C = 25 °C (Package Limited)
42
A
Pulsed Drain Current (t = 300 µs)
I_DM
120
Avalanche Current
Single Avalanche Energy^a
Maximum Power Dissipation^a
L = 0.1 mH
T_C = 25 °C
T_A = 25 °C^c
I_AS
45
E_AS
101
mJ
73.5^b
P_D
2.5
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)^c
R_thJA
50
Junction-to-Case (Drain)
R_thJC
1.7
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A.
Unit
°C/W
1/8
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