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SUD19P06-60 Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET
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SUD19P06-60
P-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25 °C, unless otherwise note)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
On-State Drain Currenta
ID(on)
VDS = - 60 V, VGS = 0 V, TJ = 150 ° C
VDS  - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 10 A, TJ = 125 °C
VGS = - 10 V, ID = - 10 A, TJ = 150 °C
Forward Transconductancea
VGS = - 4.5 V, ID = - 5 A
gfs
VDS = - 15 V, ID = - 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = - 30 V, VGS = - 10 V, ID = - 10 A
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rg
td(on)
f = 1 MHz
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 30 V, RL = 3 
ID  - 19 A, VGEN = - 10 V, Rg = 2.5 
Fall Timec
tf
Drain-Source Body Diode and Characteristics (TC = 25 °C)b
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD
IF = - 19 A, VGS = 0 V
Reverse Recovery Time
trr
IF = - 19 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min .
- 60
-1
- 30
Typ. Max.
-3
± 100
-1
- 50
- 125
0.048
0.061
22
0.060
0.102
0.120
0.077
1140
130
90
26
4.5
7
7
8
9
65
30
1710
40
15
15
100
45
- 30
- 30
-1
- 1.5
41
61
Unit
V
V
nA
µA
A

S
pF
nC

ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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