SUD19P06-60 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUD19P06-60
P-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 60
0.060 at V_GS = - 10 V
0.077 at V_GS = - 4.5 V
I_D (A)^d
- 19
- 16.8
Q_g (Typ)
26
TO-252
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
S
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)
SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise note)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse^a
I_AS
L = 0.1 mH
E_AS
Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 60
± 20
- 18.3
- 8.19
- 30
- 22
24.2
38.5^c
2.3^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on T_C = 25 °C.
t  10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
17
45
2.7
Maximum
21
55
3.25
Unit
V
A
mJ
W
°C
Unit
°C/W
1/8
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