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SUD15N06-90L Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET, Logic Level
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SUD15N06-90L
N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typa Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 10 V, ID = 10 A, TJ = 125_C
VGS = 10 V, ID = 10 A, TJ = 175_C
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 10 A
60
V
1.0
2.0
3.0
"100
nA
1
50
mA
150
15
A
0.050
0.065
0.12
W
0.15
0.065
0.090
11
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 15 A
VDD = 30 V, RL = 2 W
ID ^ 15 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
ISM
VSD
IF = 15 A, VGS = 0 V
trr
IF = 15 A, di/dt = 100 A/ms
524
98
pF
28
12
20
2
nC
3.5
7
20
8
25
ns
15
40
7
20
30
A
0.9
1.2
V
29
60
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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