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SUD15N06-90L Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET, Logic Level
SUD15N06-90L
N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = 10 V
60
0.090 @ VGS = 4.5 V
ID (A)
15
14
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction
Temperature
Pb-free
Available
D
TO-252
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD15N06-90L
SUD15N06-90L—E3 (Lead (Pb)-Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
"20
15
12
30
15
15
11
37
2a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Free Air, FR4 Board Mounta
Junction-to-Case
Notes:
a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.
1/6
Symbol
RthJA
RthJC
Typical
60
3.3
Maximum
70
4.0
Unit
_C/W
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