MC3415A Datasheet, PDF (2/6 Pages) –

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AO3415_A/_MM₂C₃3₂41₇5_PA
SPECIFICATIONS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Gate-Thres hold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-Resistance^A
Forward Tranconductance^A
Diode Forward Voltage
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
g
VSD
VDS = VGS, ID = -250 uA
V_DS = 0 V, V_GS = ±8 V
VDS = -16 V, VGS = 0 V
V_DS = -16 V, V_GS = 0 V, T_J = 55^oC
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.6 A
VGS = -2.5 V, ID = -3.1 A
VGS = -1.8 V, ID = -2.7 A
V = -5 V, I = -1.25 A
IS = -0.46 A, VGS = 0 V
fs
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
DS
D
VDS = -5 V, VGS = -4.5 V,
ID = -2.4 A
P-Channel VDS =-15V, VGS =0V, f=1MHz
VDD = -10 V, IL = -1 A,
VGEN = -4.5 V, RG = 6 Ω
Limits
Unit
Min Typ Max
-0.7
±100 nA
-1
uA
-10
-10
A
52
72 mΩ
120
12
S
-0.60
V
12.0
2.0
nC
2.0
1312
130
pF
106
6.5
20
ns
31
21
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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