MC3415A Datasheet, PDF (1/6 Pages) –

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P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SOT-23 Surface Mount Package
Saves Board Space
• Fast switching speed
• High performance trench technology
AO3415_A/_MM₂C₃3₂41₇5_PA
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
0.052 @ V_GS = -4.5V
-20 0.072 @ V_GS = -2.5V
0.120 @ V_GS = -1.8V
I_D (A)
-3.6
-3.1
-2.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
I_S
-20
V
±8
-3.6
-1.8
A
-10
±0.46 ^A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R _THJA
Maximum
100
150
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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