IRFR4615PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U4615PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Min.
150
–––
–––
3.0
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
R_G(int)
Internal Gate Resistance
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
35
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
hà ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) –––
g ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.19
34
–––
–––
–––
–––
–––
2.7
Typ.
–––
26
8.6
9.0
17
15
35
25
20
1750
155
40
179
382
Max. Units
Conditions
–––
–––
42
5.0
20
250
100
-100
V V_GS = 0V, I_D = 250µA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 21A
V V_DS = V_GS, I_D = 100µA
µA ^{VDS = 150V, VGS = 0V}
V_DS = 150V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
––– Ω
Max. Units
Conditions
––– S V_DS = 50V, I_D = 21A
I_D = 21A
f ^{–––}
–––
nC
V_DS = 75V
V_GS = 10V
–––
I_D = 21A, V_DS =0V, V_GS = 10V
–––
V_DD = 98V
–––
–––
–––
ns
I_D = 21A
f ^{RG = 7.3Ω}
V_GS = 10V
–––
V_GS = 0V
–––
V_DS = 50V
––– pF ƒ = 1.0MHz (See Fig.5)
–––
–––
h V_GS = 0V, V_DS = 0V to 120V (See Fig.11)
g V_GS = 0V, V_DS = 0V to 120V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 33
A ^{showing the}
integral reverse
G
––– ––– 140
p-n junction diode.
S
f ––– ––– 1.3 V T_J = 25°C, I_S = 21A, V_GS = 0V
–––
–––
70
83
–––
–––
ns
T_J = 25°C
T_J = 125°C
–––
–––
177
247
–––
–––
nC
T_J = 25°C
T_J = 125°C
V_R = 100V,
f ^{IF = 21A}
di/dt = 100A/µs
––– 4.9 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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