IRFR4615PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U4615PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D
V_DSS
150V
R_DS(on) typ.
34m:
max. 42m:
S
I_D
33A
D
D
S
G
DPak
IRFR4615PbF
S
D
G
IPAK
IRFU4615PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
c I_AR
Avalanche Current
c E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
j Junction-to-Case
i Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
G
Gate
D
Drain
Max.
33
24
140
144
0.96
± 20
38
-55 to + 175
300
S
Source
Units
A
W
W/°C
V
V/ns
°C
109
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
Max.
1.045
50
110
mJ
A
mJ
Units
°C/W
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