IRFR13N15D Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)

IRFR/U13N15D
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
I_GSS
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
–––
0.17
–––
–––
–––
–––
–––
–––
–––
–––
0.18
5.5
25
250
100
-100
V
V/°C
Ω
V
µA
nA
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA †
V_GS = 10V, I_D = 8.3A „
V_DS = V_GS, I_D = 250µA
V_DS = 150V, V_GS = 0V
V_DS = 120V, V_GS = 0V, T_J = 150°C
V_GS = 30V
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
5.0 ––– –––
––– 19 29
––– 5.5 8.2
––– 9.4 14
––– 8.0 –––
––– 26 –––
––– 12 –––
––– 11 –––
––– 620 –––
––– 130 –––
––– 38 –––
––– 780 –––
––– 62 –––
––– 110 –––
S V_DS = 50V, I_D = 8.3A
I_D = 8.3A
nC V_DS = 120V
V_GS = 10V, „
V_DD = 75V
ns ^{ID = 8.3A}
R_G = 11Ω
V_GS = 10V „
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 120V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 120V …
Avalanche Characteristics
Parameter
E_AS
Single Pulse Avalanche Energy‚
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
130
8.3
8.6
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
R_θJC
R_θJA
R_θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
–––
1.75
–––
50
°C/W
–––
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
MOSFET symbol
D
––– ––– 14
A ^{showing the}
integral reverse
G
––– ––– 56
p-n junction diode.
S
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
––– ––– 1.3 V T_J = 25°C, I_S = 8.3A, V_GS = 0V „
––– 110 ––– ns T_J = 25°C, I_F = 8.3A
––– 520 ––– nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
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