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IRFR13N15D Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)
IRFR/U13N15D
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS RDS(on) max
ID
150V
0.18Ω
14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR13N15D IRFU13N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
14
9.8
56
86
0.57
± 30
3.8
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Active Clamp Forward Converter
1 / 10
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