AON7430L Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7430L
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
30
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=30V, V_GS=0V
T_J=55°C
1
µA
5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±20V
100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1.5 1.9 2.5
V
I_D(ON)
On state drain current
V_GS=10V, V_DS=5V
80
A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=20A
V_GS=4.5V, I_D=20A
T_J=125°C
10
12
mΩ
14
17
13
16 ^mΩ
g_FS
Forward Transconductance
V_DS=5V, I_D=20A
45
S
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
0.7
1
V
I_S
Maximum Body-Diode Continuous Current
25
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
610 760 910 pF
88 125 160 pF
40
70 100 pF
0.8 1.6 2.4
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
11
14
17
nC
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=20A
5
6.6
8
nC
1.9 2.4 2.9 nC
Q_gd
Gate Drain Charge
1.8
3
4.2 nC
t_D(on)
Turn-On DelayTime
4.4
ns
t_r
Turn-On Rise Time
V_GS=10V, V_DS=15V, R_L=0.75Ω,
9
ns
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
17
ns
t_f
Turn-Off Fall Time
6
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=20A, dI/dt=500A/µs}
5.6
7
8
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=20A, dI/dt=500A/µs}
6.4
8
9.6 ^nC
A. The value of R_θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The Power
dissipation P_DSM is based on R _θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.
D. The R_θJA is the sum of the thermal impedence from junction to case R_θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T_J(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA curve
provides a single pulse rating.
Rev 0 : Nov-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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