AON7430L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7430L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON7430L uses advanced trench technology to provide excellent R_{DS(ON) with low gate charge.}
This device is suitable for high side switch in SMPS and general purpose applications.
Features
V_DS (V) = 30V
I_D = 20A
R_DS(ON) < 12mΩ
R_DS(ON) < 16mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
Top View
D
D
D
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
20
16
80
9
7
22
24
25
10
1.7
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
60
Steady-State
R_θJC
4
Max
40
75
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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