AOB270L Datasheet, PDF (2/6 Pages) –

AOT270L/AOB270L
75V N-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
R_DS(ON) Static Drain-Source On-Resistance
I_D=250µA, V_GS=0V
75
V_DS=75V, V_GS=0V
T_J=55°C
V_DS=0V, V_GS=±20V
V_DS=V_GS I_D=250µA
2 2.5
V_GS=10V, V_DS=5V
560
V_GS=10V, I_D=20A
2.1
TO220
T_J=125°C
3.3
V_GS=6V, I_D=20A
2.4
TO220
V_GS=10V, I_D=20A
1.9
TO263
T_J=125°C
3.1
V_GS=6V, I_D=20A
2.2
TO263
V
1
µA
5
±100 nA
3
V
A
2.6
4.2
3
mΩ
2.3
3.9
2.8
g_FS
Forward Transconductance
V_DS=5V, I_D=20A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current ^G
80
S
0.66 1
V
140 A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=37.5V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
10350
pF
1560
pF
90
pF
0.4 0.9 1.4 Ω
SWITCHING PARAMETERS
Q_g
Total Gate Charge
153 215 nC
Q_gs
Gate Source Charge
V_GS=10V, V_DS=37.5V, I_D=20A
33
nC
Q_gd
Gate Drain Charge
35
nC
t_D(on)
Turn-On DelayTime
30
ns
t_r
Turn-On Rise Time
V_GS=10V, V_DS=37.5V, R_L=1.9Ω,
24
ns
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
80
ns
t_f
Turn-Off Fall Time
32
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=20A, dI/dt=500A/µs}
45
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=20A, dI/dt=500A/µs}
330
nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
Power dissipation P_DSM is based on R _θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P_D is based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial T_J =25°C.
D. The R_θJA is the sum of the thermal impedance from junction to case R_θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T_J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 140A.
H. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
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